Towards Modeling the Effects of Lightning Injection on Power MOSFETs



Published Oct 10, 2010
Sankalita Saha Jose R. Celaya Bhaskar Saha Phil Wysocki Kai F. Goebel


Power electronics are widely used in critical roles in modern day aircrafts and hence their health management is of great interest. An important part of prognostics and health management of these devices is understand- ing the effect of high-stress events such as lightning and how they affect their aging. In this paper we present our study and analysis of lightning injection experiments with power MOSFETs in their ON state. We show the different kind of damages that can be caused by such events and analyze their effects on device performance parameters. In addition, we present a simple yet effective modeling technique that can model the degradation in these devices. Such models will play a valuable role in understanding the behavior of these damaged devices when operated under normal conditions later and subsequently in prognosis of their remaining useful life.We present our results on the performance of this modeling and the scope within which they can be utilized for accurate estimation of device damage.

How to Cite

Saha, S. ., R. Celaya, J. ., Saha, B. ., Wysocki, P. ., & F. Goebel , K. . (2010). Towards Modeling the Effects of Lightning Injection on Power MOSFETs. Annual Conference of the PHM Society, 2(1).
Abstract 280 | PDF Downloads 117




Brown, J. (n.d.). Power MOSFET Basics: Understand- ing Gate Charge and Using It To Assess Switching Performance. Vishay Siliconix, AN608.
Celaya, J., Saha, S., Wysocki, P., Ely, J., Nguyen, T., Szatkowski, G., et al. (2009). Effects of Lightning Injection on Power-MOSFETs. In Proceedings of Annual Conference of the Prognostics and Health Management Society.
Clark, M. (2004). Lightning Protection for Aircraft Electrical Power and Data Communication Systems. Application NOte: Micronote 127.
Dodge, J. (2006). Power MOSFET Tutorial. IEEE Transactions on Nuclear Science, Advanced Power Technology Application Note, APT-0403 Rev B.
Felix, J. A., Shaneyfelt, M. R., Dodd, P. E., Draper, B. L., Schwank, J. R., & Dalton, S. M. (2005). Radiation-induced off-state leakage current in commercial power MOSFETs. IEEE Transactions on Nuclear Science, 52:(6), 2378 - 2386.
Jeong, J. S. (2005). Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System. Microelectronics Reliability, 45, 1398-1401.
Lall, P., Bhat, C., Hande, M., More, V., Vaidya, R., Suh- ling, J., et al. (2008). Latent Damage Assessent and Prognostication of Residual Life in Airborne Lead-Free Electronics Under Thermo- Mechanical Loads. In Proceedings of International Conference on Prognostics and Health Management.
McDonald, T., Soldano, M., Murray, A., & Avram, T. (2000). Power MOSFET Avalanche Design Guidelines. International rectifier Application Note, AN-1005.
Oh, K. (n.d.). MOSFET Basics. Fairchild Technical Manual, AN9010.
RTCA/DO-160E. (2004). Lightning Induced Transient Susceptibility. Environmental Conditions and Test Procedures for Airborne Equipment, Section 22.
SAE. (2005). Aircraft Lightning Environment and Related Test Waveforms. SAE, ARP5412.
Saha, B., Celaya, J., Goebel, K., & P.Wysocki. (2009). Towards Prognostics for Electronics Components. In Proceedings of IEEE AEROSPACE.
Satoh, B., & Shimoda, Y. (1996). Two-dimensional analysis of surge response in thyristor lightning surge protection devices. In 8th International Symposium on Power Semiconductor Devices and ICs.
Selva, L. E., Scheick, L. Z., McClure, S., Miyahira, T., Guertin, S. M., Shah, S. K., et al. (2003). Catas- trophic SEE in High-Voltage Power MOSFETs. In Proceedings of Radiation Effects Data Workshop (p. 113 - 120).
Sonnenfeld, G., Goebel, K., & Celaya, J. R. (2008). An agile accelerated aging, characterization and scenario simulation system for gate controlled power transistors. In Proceedings of IEEE AUTOTEST- CON.
Tasca, D. M. (1976). Pulse Power Damage Characteristics of Electrical Resistors. In Air Force Weapons Laboratory.
Wunsch, D. C., & Bell, R. R. (1968). Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages. IEEE Transactions on Nuclear Science, 15:(6), 244-259.
Wysocki, P., Vashchenko, V., Celaya, J., Saha, S., & Goebel, K. (2009). Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components. In Proceedings of Annual Conference of the Prognostics and Health Management Society.
Technical Research Papers

Most read articles by the same author(s)

1 2 > >>