Towards Accelerated Aging Methodologies and Health Management of Power MOSFETs (Technical Brief)
Understanding aging mechanisms of electronic components is of extreme importance in the aerospace domain where they are part of numerous critical subsystems including avionics. In particular, power MOSFETs are of special interest as they are involved in high voltage switching circuits such as drivers for electrical motors. With increased use of electronics in aircraft control, it becomes more important to understand the degradation of these components in aircraft specific environments. In this paper, we present an accelerated aging methodology for power MOSFETs that subject the devices to indirect thermal overstress during high voltage switching. During this accelerated aging process, two major modes of failure were observed – latch-up and die attach degradation. In this paper we present the details of our aging methodology along with details of experiments and analysis of the results.
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accelerated testing, electronic equipment, electronic prognostic methods, electronic systems, electronics PHM, field effect transistors (FET), remaining useful life (RUL), run-to-failure data, semiconductor device reliability, sensor fusion, applications: electronics
(Blackburn 1987) D. Blackburn. Turn-off failure of Power MOSFETs, IEEE Transactions on Power Electronics, pp. 136-142, 1987.
(Busatto et al. 1997) G. Busatto, G. Persiano, A. Strollo and P. Spirito. Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode, Microelectronics Reliability, pp. 1507-1510, 1997.
(Dupont et al. 2007) L. Dupont, S. Lefebvre, M. Bouaroudj, Z. Khatir and J. C. Faugieres.Failure modes on low voltage power MOSFETs under high temperature application, Microelectronics Reliability, vol. 47, pp. 1767-1772, 2007.
(Haran et al. 2007) A. Haran, J. Barak, D. David, N. Refaeli, B. Fischer, K. Voss, G. Du and M. Heiss. Mapping of single event burnout in power MOSFETs, IEEE Transactions on Nuclear Science, pp. 2488-2494, 2007.
(Khong et al. 2007) B. Khong, M. Legros, P. Tounsi, P. Dupuy, X. Chauffleur, C. Levade, G. Vanderschaeve and E. Scheid. Characterization and modelling of ageing failures on power MOSFET devices, Microelectronics Reliability, vol. 47, pp. 1735-1740, 2007.
(Khong et al. 2005) B. Khong, P. Tounsi, P. Dupuy and X. Chauffleur. Innovative methodology for predictive reliability of intelligent power devices using extreme electrothermal fatigue, Microelectronics Reliability, vol. 45, pp. 1717-1722, 2005.
(Kuo et al. 1983) D. Kuo, C. Hu and M. Chi, ” , pp.,. dV/dt breakdown in power MOSFET’s, IEEE Electron Device Letters, pp. 1-2, 1983.
(Patil et al. 2009) N. Patil, J. Celaya, D. Das, K. Goebel and M. Pecht. Precursor parameter identification for IGBT prognostics, IEEE Transactions on Reliability, pp. 271-276, 2009.
(Saha et al. 2009) B. Saha, J. Celaya and K. Goebel. Towards Prognostics for Electronics Components. BigSky MT.
(Singh 2004) P. Singh. Power MOSFET failure mechanisms.
(Sonnenfeld et al. 2008) G. Sonnenfeld, K. Goebel and e. al. An agile accelerated aging, characterization and scenario simulation system for gate controlled power transistors.
(Stojadinovic et al. 2005) N. Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic and S. Dimitrijev. Effects of electrical stressing in power VDMOSFETs, Microelectronics Reliability, vol. 45, pp. 115- 122, 2005.
(Wahle et al. 1990) P. Wahle, R. Schrimpf and K. Galloway. Simulated Space Radiation Effects on Power MOSFET’s in Switching Power Supplies, IEEE Transactions on Industry Applications, vol. 26, pp. 798-802, 1990.
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