Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components (Technical Brief)



Published Mar 26, 2021
Phil Wysocki Vladislav Vashchenko Jose Celaya Sankalita Saha Kai Goebel


This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress. It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage.

How to Cite

Wysocki, P., Vashchenko, V., Celaya, J., Saha, S., & Goebel, K. (2021). Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components (Technical Brief). Annual Conference of the PHM Society, 1(1). Retrieved from https://papers.phmsociety.org/index.php/phmconf/article/view/1424
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avionics, field effect transistors (FET), semiconductor device reliability, test rig, applications: electronics

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