Health Monitoring of Power Semiconductor Module Using Temperature Sensitive Electrical Parameter
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Abstract
Power semiconductor modules (PSMs) are critical components in power electronics applications such as motor drives, renewable energy systems, and electric vehicles. The reliable operation of these modules is crucial for the safe and efficient operation of these systems. One of the most common failure mechanisms in PSMs is due to overheating or repeated heating and cooling, which can result in thermal stress and component degradation. Therefore, monitoring the temperature of PSMs is essential for ensuring their health and preventing catastrophic failures.
By monitoring temperature-sensitive electrical parameters (TSEPs), such as the on-state voltage drop, it is possible to detect changes in the temperature of the PSM in real-time. The change in voltage drop can be used as an early warning sign of a potential failure or degradation of the PSM. The advantage of this method is that it provides a non-invasive and real-time monitoring solution that can detect changes in the PSM's temperature distribution.
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Power Semiconductor Module, Thermal Resistance, Temperature Sensitive Electrical Parameter
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