Health Monitoring of Power Semiconductor Module Using Temperature Sensitive Electrical Parameter

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Published Sep 4, 2023
Guesuk Lee Sungsoon Choi Byongjin Ma Kim Jemini

Abstract

Power semiconductor modules (PSMs) are critical components in power electronics applications such as motor drives, renewable energy systems, and electric vehicles. The reliable operation of these modules is crucial for the safe and efficient operation of these systems. One of the most common failure mechanisms in PSMs is due to overheating or repeated heating and cooling, which can result in thermal stress and component degradation. Therefore, monitoring the temperature of PSMs is essential for ensuring their health and preventing catastrophic failures.

By monitoring temperature-sensitive electrical parameters (TSEPs), such as the on-state voltage drop, it is possible to detect changes in the temperature of the PSM in real-time. The change in voltage drop can be used as an early warning sign of a potential failure or degradation of the PSM. The advantage of this method is that it provides a non-invasive and real-time monitoring solution that can detect changes in the PSM's temperature distribution.

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Keywords

Power Semiconductor Module, Thermal Resistance, Temperature Sensitive Electrical Parameter

References
Z. Zhang, L. Liang, and H. Shang, “Review of SiC MOSFET Failure Analysis Under Extreme Conditions: High Temperature, High Frequency and Irradiation,” in Conference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power Engineering, Singapore, 2022, pp. 81–106. doi: 10.1007/978-981-19-1922-0_8.

J. Kuprat, Y. Pascal, and M. Liserre, “Real-Time Thermal Characterization of Power Semiconductors using a PSObased Digital Twin Approach,” in 2022 24th European Conference on Power Electronics and Applications (EPE’22 ECCE Europe), Sep. 2022, p. P.1-P.8.

D. Xie, H. Wang, X. Ge, Q. Deng, B. Gou, and L. Ma, “A Voltage-Based Multiple Fault Diagnosis Approach for Cascaded H-Bridge Multilevel Converters,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 5092–5106, Oct. 2022, doi: 10.1109/JESTPE.2021.3108895.

N. Ali, Q. Gao, P. Sovička, P. Makyš, M. Štulrajter, and K. Ma, “Power Converter Fault Detection and Isolation Using High-Frequency Voltage Injection in Switched Reluctance Motor Drives for Automotive Applications,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 3, pp. 3395–3408, Jun. 2022, doi: 10.1109/JESTPE.2020.3022575
Section
Regular Session Papers