A Yield-Reliability Relation Modeling Approach based on Random Effects Degradation Models



Tao Yuan Xiaoyan Zhu Yue Kuo


This paper presents a unified modeling framework for yield and reliability in micro-/nano-electronics manufacturing via spatiotemporal modeling of defects. The spatial modeling and temporal modeling of defects refer to modeling of the spatial distribution of defects in manufacturing processes and modeling of the growth of defects with time when devices are subject to stresses, respectively. The defect growth process is characterized by the random-effect degradation modeling method. The presented modeling framework will allow us to use abundantly available process control data to predict the device reliability.

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