Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure
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Abstract
This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).
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electronic prognostic methods
Celaya, J. R., Patil, N., Saha, S., Wysocki, P., & Goebel, K. (2009). Towards Accelerated Aging Methodologies and Health Management of Power MOS-
FETs (Technical Brief). In Annual Conference of the Prognostics and Health Management Society 2009. San Diego, CA..
Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z., & Faugires, J. C. (2007). Failure modes on low voltage power MOSFETs under high temperature application. Microelectronics Reliability, 47(9-11), 1767-1772.
Ginart, A., Roemer, M., Kalgren, P., & Goebel, K. (2008). Modeling Aging Effects of IGBTs in Power Drives by Ringing Characterization. In IEEE International Conference on Prognostics and Health Management.
Katsis, D., & Wyk, D. (2003). Void-Induced Ther- mal Impedance in Power Semiconductor Modules: Some Transient Temperature Effects. , 39, 1239- 1246.
Khong, B., Legros, M., Tounsi, P., Dupuy, P., Chauffleur, X., Levade, C., et al. (2007). Characterization and modelling of ageing failures on power MOSFET devices. Microelectronics Reliability, 47, 1735- 1740.
Khong, B., Tounsi, P., Dupuy, P., & Chauffleur, X. (2005). Innovative methodology for predictive re- liability of intelligent power devices using extreme electrothermal fatigue. Microelectronics Reliabil- ity, 45, 1717-1722.
Morozumi, A., Yamada, K., Miyasaka, T., Sumi, S., & Seki, Y. (2003). Reliability of Power Cycling for IGBT Power Semiconductor Modules. , 39, 665- 671.
Patil, N., Celaya, J., Das, D., Goebel, K., & Pecht, M. (2009). Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics. Reliability, IEEE Transactions on, 58(2), 271-276.
Reynolds, F. (1974). Thermally Accelerated Aging Of Semiconductor Components. , 62.
Saha, B., Celaya, J. R., Wysocki, P. F., & Goebel, K. F. (2009). Towards prognostics for electronics com- ponents. In Aerospace conference, 2009 IEEE (p. 1-7).
Sonnenfeld, G., Goebel, K., & Celaya, J. R. (2008). An agile accelerated aging, characterization and scenario simulation system for gate controlled power transistors. In AUTOTESTCON, 2008 IEEE (p. 208-215).
Stathis, J. H., Linder, B. P., Pey, K. L., Palumbo, F., & Tung, C. H. (2005). Dielectric Breakdown Mechanisms in Gate Oxides. Journal of Applied Physics, 98.
Stojadinovic, N., Manic, I., Davidovic, V., Dankovic, D., Djoric-Veljkovic, S., Golubovic, S., et al. (2005). Effects of electrical stressing in power VDMOS- FETs. Microelectronics Reliability, 45, 115-122.
Suhir, E. (1986). Stresses in Bi-Metal Thermostats. Journal of Applied Mechanics, 53(3), 657-660.
Suhir, E. (2007). How to Make a Device into a Product: Accelerated Life Testing (ALT), Its Role, Attributes, Challenges, Pitfalls, and Interaction with Qualification Tests.
E. Suhir, Y. Lee, & C. Wong (Eds.), Micro- and Opto-Electronic Materials and Structures: Physics, Mechanics, Design, Reliability, Packaging (Vol. 2). Springer US.
Thebaud, J., Woirgard, E., Zardini, C., Azzopardi, S.,Briat, O., & Vinassa, J. (2003). Strategy for Designing Accelerated Aging Tests to Evaluate IGBT Power Modules Lifetime in Real Operation Mode. , 26, 429-438.
Wu, W., Held, M., Jacob, P., Scacco, P., & Birolini, A. (1995). Thermal Stress Related Packaging Failure in Power IGBT Modules. In 1995 International Symposium on Power Semiconductor Devices and ICs. Yokohama.
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